In-situ MEMS Testing

Related to the dramatically smaller volume of microelectromecanical systems (MEMS), new methods in testing and qualification are needed. On single crystal silicon (SCSi) based devices, stress and loading in operation introduces defects during the MEMS life time and increases the risk of failure. Reliability studies on potential failure sources have an impact on MEMS design and are essential to assure the long term functioning of the device. In this paper, mechanical tests such as tensile tests on SiSC beams are discussed to assess the resistance of SCSi structures upon loading. Defects introduced by DRIE, thermal annealing, dicing and bonding influence the crystalline perfection and have a direct impact on the mechanical properties of MEMS and on their aging behavior. Strain, defects and deformations are analyzed using High Resolution X-ray Diffraction Methods (HRXRD). Supporting simulations are done by Finite Element Method (FEM).